Dual optical marker Raman characterization of strained GaN-channels on AlN using AlN/GaN/AlN quantum wells and N isotopes
نویسندگان
چکیده
on AlN using AlN/GaN/AlN quantum wells and N isotopes Meng Qi, Guowang Li, Vladimir Protasenko, Pei Zhao, Jai Verma, Bo Song, Satyaki Ganguly, Mingda Zhu, Zongyang Hu, Xiaodong Yan, Alexander Mintairov, Huili Grace Xing, and Debdeep Jena Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA Ioffe Physico-Technical Institute, Russian Academy of Sciences, Saint Petersburg 194021, Russia
منابع مشابه
Two-dimensional electron gases in strained quantum wells for AlN/GaN/AlN double heterostructure field-effect transistors on AlN
Double heterostructures of strained GaN quantum wells (QWs) sandwiched between relaxed AlN layers provide a platform to investigate the quantum-confined electronic and optical properties of the wells. The growth of AlN/GaN/AlN heterostructures with varying GaN quantum well thicknesses on AlN by plasma molecular beam epitaxy (MBE) is reported. Photoluminescence spectra provide the optical signat...
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